Inverting output driver circuit for reducing electron injection into the substrate

ABSTRACT

A new inverting output driver circuit is disclosed that reduces electron injection into the substrate by the drain of the circuit&#39;s pull-up field effect transistor. This is accomplished by adding additional circuitry that allows the gate voltage of the pull-up transistor to track the source voltage. The output circuit makes use of an inverter having an output node (hereinafter the intermediate node) coupled to V CC  through a first P-channel FET, and to ground through first and second series coupled N-channel FETs, respectively. The gates of the P-channel FET and the first N-channel FET are coupled to and controlled by an input node. The inverter output node controls the gate of third N-channel FET, through which a final output node is coupled to V CC . The intermediate node is coupled to the final output node through a fourth N-channel FET, the gate of which is held at ground potential. The gate of the second N-channel FET is coupled to V CC  through a second P-channel FET and to the final output node through a fifth N-channel FET which has much greater drive than the second P-channel FET; the gates of both the second P-channel FET and the fifth N-channel FET also being held at ground potential. Certain obvious variations of the circuit are possible. For example, the function of the first and second N-channel FETs may be reversed. In addition, the second P-channel FET functions as a resistor, and may be replaced with any device which functions as a resistor.

FIELD OF THE INVENTION

This invention relates to integrated circuit design and, moreparticularly, to output circuits (also referred to as buffer circuits)used in CMOS applications.

BACKGROUND OF THE INVENTION

FIG. 1 depicts a conventional output driver circuit. Given theassumption that the gate voltages on both transistor Q1 and transistorQ2 are at ground potential and that the output node O is low,reflections at a mismatched interface may cause output node O to fallbelow ground to, say, -1.0 volts. Under these conditions, the gate oftransistor Q1 becomes positive with respect to the source. Consequently,the channel of transistor Q1 begins to conduct, and the source region ofQ1 begins to generate free electron carriers. In an insulated-gate fieldeffect transistor (hereinafter also FET), such as Q1, electric fieldintensity is greatest near the silicon-silicon dioxide interface wherethe drain junction is directly under the gate edge. As the free electroncarriers from the source region pass through the high-field region nearthe drain, they can acquire energy far in excess of that which would beattributable solely to ambient temperature. In such a state, thoseelectrons are considered "hot" carriers, and are capable of causing anumber of "hot-carrier" effects. For a field effect transistor, theworst case scenario for hot electron generation is generally regarded tobe a condition where gate-to-source voltage (V_(GS)) is about one-halfdrain-to-source voltage (V_(DS)).

In MOS memory circuits, "hot-carrier effects" can disturb circuitoperation both by directly altering stored data values, and bypermanently altering device performance. Although the vast majority ofhot electron carriers are collected by the drain region, some leave thechannel and travel to the gate through the gate oxide layer. Some of theelectrons inevitably become trapped in the gate oxide layer, therebyshifting the threshold voltage of the device. Other electrons areinjected into the substrate, through which they can migrate to thememory array where they are attracted by cells in which a logic value of"1" (i.e., a positive charge) is stored. Through this mechanism, datamay become corrupted if the refresh cycle is not shortened to compensatefor the charge loss. Electron injection into the substrate can alsoprecipitate a latch-up condition in CMOS circuits.

The very structure required to fabricate bulk CMOS circuitry makes itsusceptible to latchup. To have both N-channel and P-channel fieldeffect transistors, it is necessary to have both P-type and N-typebackground material. Typically, the CMOS fabrication process begins witha silicon wafer of a single conductivity type. Regions of the oppositeconductivity type, known as wells or tubs, are created it by diffusingor implanting dopant species, which overwhelm the original dopant. Forcircuitry constructed on a p-type wafer, P-channel FETs are built in anN-well, while N-channel FETs are built directly in the P-type wafersubstrate. Unfortunately, the FETs are not the only structuresfabricated. PNPN devices consisting of parasitic bipolar transistors arealso created. Under certain operational conditions, these PNPN devicescan generate a V_(CC) (power supply voltage) to ground short that candestroy the circuitry.

Some designers have addressed the electron injection problem in outputdriver circuits by replacing FET Q1 of FIG. 1 with a pair of FETS, Q3and Q4. Such a circuit is depicted in FIG. 2. Such an approach iseffective in reducing electron injection when the output node O dropsbelow ground potential, as transistors Q3 and Q4 act to divide thevoltage drop between V_(CC) and the output node. However, the arearequired for both FETs Q3 and Q4 is approximately four times thatrequired for transistor Q1 of FIG. 1. Thus, this solution for reducingelectron injection has its costs, which for a typical memory circuit canbe significant.

What is needed is a new, space-efficient driver circuit that will reduceelectron injection into the substrate.

SUMMARY OF THE INVENTION

A new inverting output driver circuit is disclosed that reduces electroninjection into the substrate by the drain of the circuit's pull-up fieldeffect transistor. This is accomplished by adding additional circuitrythat allows the gate voltage of the pull-up transistor to track thesource voltage. The output circuit makes use of a tri-state inverterhaving an output node (hereinafter the intermediate node) coupled toV_(CC) through a first P-channel FET, and to ground through first andsecond series coupled N-channel FETs, respectively. The gates of theP-channel FET and the first N-channel FET are coupled to and controlledby an input node. The intermediate node controls the gate of thirdN-channel FET, through which a final output node is coupled to V_(CC).The intermediate node is coupled to the final output node through afourth N-channel FET, the gate of which is held at ground potential. Thegate of the second N-channel FET is coupled to V_(CC) through a secondP-channel FET and to the final output node through a fifth N-channel FETwhich has much greater drive than the second P-channel FET; the gates ofboth the second P-channel FET and the fifth N-channel FET also beingheld at ground potential. When the final output is greater than groundpotential, the gate of the second N-channel FET is at V_(CC). Thus thechannel of the second N-channel is conductive. However, when the finaloutput node drops below ground potential, gate voltage is greater thansource voltage for both the fourth and the fifth N-channel FETs, thuscausing both FETs to conduct. This results in the gate of the secondN-channel FET being pulled to below ground potential, cutting offcurrent flow through that FET. Simultaneously, the intermediate node isdirectly coupled to the final output node through the fourth N-channelFET, so that the voltage on the gate of the third N-channel FET tracksthe source voltage thereon. Thus, current flow through the thirdN-channel FET is cut off and hot electron injection is mitigated.Certain variations of the circuit are possible. For example, thefunction of the first and second N-channel FETs may be reversed. Inaddition, the second P-channel FET functions as a resistor, and may bereplaced with any device which functions as a resistor, including asixth N-channel FET having its gate tied to V_(CC) or a doped or undopedpolycrystalline silicon resistor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a conventional, double N-channel outputdriver;

FIG. 2 is a circuit diagram of a prior-art triple N-channel outputdriver which reduces hot electron injection;

FIG. 3 is a circuit diagram of a first embodiment of the new,space-efficient output driver circuit which reduces hot electroninjection;

FIG. 4 is a circuit diagram of a second embodiment of the new,space-efficient output driver circuit which reduces hot electroninjection;

FIG. 5 is a circuit diagram of the first embodiment of the new,space-efficient output driver circuit, but with the second P-channel FETreplaced by a resistor.

FIG. 6 is a circuit diagram of the second embodiment of the new,space-efficient output driver circuit, but with the second P-channel FETreplaced by an N-channel FET having its gate coupled to V_(CC).

FIG. 7 is a plot of gate voltage on FET QN3 vs. final output nodevoltage.

PREFERRED EMBODIMENT OF THE INVENTION

Referring now to FIG. 3, a first embodiment of the new, space-efficientoutput driver circuit has an intermediate node N_(M) that is coupled toa power supply voltage (V_(CC)) through a first P-channel FET QP1, andto ground through a first N-channel FET QN1 and a second N-channel FETQN2, QN1 and QN2 being series coupled, with QN1 being electricallynearer node N_(M). The gates of FET QP1 and FET QN1 are coupled to andcontrolled by an input node N_(I). It should be understood that FETsQP1, QN1 and QN2 can be operated as a tri-state inverter. Theintermediate node N_(M) is coupled to and controls the gate of a thirdN-channel FET QN3, (also referred to herein as the output node pull-uptransistor) through which a final output node N_(O) is coupled toV_(CC). The intermediate node N_(M) is coupled to the node N_(O) througha fourth N-channel FET QN4, the gate of which is permanently held atground potential. The gate of FET QN2 is coupled to V_(CC) through asecond P-channel FET QP2, and to the final output node N_(O) through afifth N-channel FET QN5, which has much greater drive than FET QP2. Thegates of both the FET QP2 and FET QN5 are also permanently held atground potential. When the potential on the final output node N_(O) isgreater than ground potential, the gate of FET QN2 is at V_(CC). Thusthe channel of FET QN2 is conductive. However, when the final outputnode N_(O) drops below ground potential, gate voltage is greater thansource voltage for both FET QN4 and FET QN5, thus causing the channelsof both of these FETs to conduct. This results in the gate of FET QN2being pulled to below ground potential, which reduces current flowthrough that FET (If the magnitude of the drop below ground potential issufficient, current flow through FET QN2 will be cut off entirely).Simultaneous with the drop in current flow through FET QN2, theintermediate node N_(M) is directly coupled to the final output nodeN_(O) through FET QN4, so that the voltage on the gate of the FET QN3tracks the source voltage thereon. Thus, current flow through FET QN3 isreduced or cut off, and hot electron injection into the substrate ismitigated.

Referring now to FIG. 4, a second embodiment of the new output drivercircuit similar to the first embodiment, with the exception that FET QN2is coupled to the input node N_(I), and FET QN1 is coupled to V_(CC)through FET QP2 and to the final output node N_(O) through FET QN5.

It will be noted that the second P-channel FET QP2 functions as aresistor. Hence, it may be replaced by any device which functions as aresistor, including a low-drive N-channel FET having its gate coupled toV_(CC) or a strip of doped or undoped polycrystalline silicon whichprovides the desired current flow. FIG. 5 depicts the embodiment of FIG.3 with FET QP2 replaced by a resistor R1. Likewise, FIG. 6 depicts theembodiment of FIG. 4, but with FET QP2 replaced by an N-channel FET QN6having its gate coupled to V_(CC).

The new output driver circuit has a definite space-savings advantageover the circuit depicted in FIG. 2. Although the area required for bothFETs Q3 and Q4 of FIG. 2 is approximately four times that required fortransistor Q1 of FIG. 1, the total space required for FETs QP1, QP2,QN2, QN3, QN4, and QN5 is approximately one half that required for FETsQ3 and Q4 of FIG. 2.

Referring now to FIG. 7, gate voltage on FET QN3 and voltage on thefinal output node N_(O) are both plotted as a function of time. It willbe observed that when the voltage on the final output node N_(O) dropsmore than a threshold voltage below ground potential, both FET QN4 andFET QN5 begin to turn on, with the result that after a transition periodT, the gate voltage is clamped to the final output node. As a practicalmatter, the output should only drop below ground potential when there isa high logic level at the input, and the intermediate node and the finaloutput node are at low logic levels.

Although only several embodiments of the new space-efficient, hotelectron injection mitigating driver circuit is depicted, it will beobvious to those having ordinary skill in the art of integrated circuitdesign that changes and modifications may be made thereto withoutdeparting from the spirit and the scope of the invention as hereinafterclaimed.

We claim:
 1. A space-efficient, inverting output driver circuit that reduces hot electron injection, said circuit comprising:first and second P-channel FETs; first, second, third, fourth and fifth N-channel FETs; each P-channel FET and each N-channel FET having, by definition, a gate, a source region, a drain region, and a channel region; said fifth N-channel FET having greater drive than said second P-channel FET; the gate of the second N-channel FET being coupled to a power supply voltage (V_(CC)) through the second P-channel FET; the gates of the second P-channel FET, the fourth N-channel FET, and the fifth N-channel FET being permanently held at ground potential; an input node which is coupled to the gates of the first P-channel FET and the first N-channel FET; an intermediate node that is coupled to a power supply voltage (V_(CC)) through the first P-channel FET, and to ground through both the first N-channel FET and the second N-channel FET, said first and second N-channel FETs being series coupled, with the first N-channel FET being electrically nearer the intermediate node; said intermediate node being coupled to the gate of the third N-channel FET; and a final output node that is coupled to V_(CC) through the third N-channel FET, to the intermediate node through the fourth N-channel FET, and to the gate of the second N-channel FET through the fifth N-channel FET.
 2. The inverting output driver circuit of claim 1, wherein said fifth N-channel FET has at least double the drive of said second P-channel FET.
 3. The inverting output driver circuit of claim 2, wherein gate-to-source voltage is maintained at less than threshold voltage for the third N-channel FET when the potential on the final output node is less than ground potential.
 4. A space-efficient, inverting output driver circuit that reduces hot electron injection, said circuit comprising:first and second P-channel FETs; first, second, third, fourth and fifth N-channel FETs; each P-channel FET and each N-channel FET having, by definition, a gate, a source region, a drain region, and a channel region; said fifth N-channel FET having greater drive than said first P-channel FET; the gate of the first N-channel FET being coupled to a power supply voltage (V_(CC)) through the second P-channel FET; the gates of the second P-channel FET, the fourth N-channel FET, and the fifth N-channel FET being permanently held at ground potential; an input node which is coupled to the gates of the first P-channel FET and the second N-channel FET; an intermediate node that is coupled to a power supply voltage (V_(CC)) through the first P-channel FET, and to ground through both the first N-channel FET and the second N-channel FET, said first and second N-channel FETs being series coupled, with the first N-channel FET being electrically nearer the intermediate node; said intermediate node being coupled to the gate of the third N-channel FET; and a final output node that is coupled to V_(CC) through the third N-channel FET, to the intermediate node through the fourth N-channel FET, and to the gate of the first N-channel FET through the fifth N-channel FET.
 5. The inverting output driver circuit of claim 4, wherein said fifth N-channel FET has at least double the drive of said second P-channel FET.
 6. The inverting output driver circuit of claim 5, wherein gate-to-source voltage is maintained at less than threshold voltage for the third N-channel FET when the potential on the final output node is less than ground potential.
 7. An output driver circuit comprising:an N-channel pull-up field effect transistor for coupling a final output node to a power supply voltage bus; an intermediate node coupled to the gate of said pull-up transistor; a tri-state inverter circuit which couples an input node to said intermediate node; means for clamping the intermediate node to the final output node whenever the intermediate node is in a low logic state, and the final output node drops more than a threshold voltage below ground potential.
 8. The output driver circuit of claim 7, wherein said tristate inverter circuit comprises:a P-channel pull-up field-effect transistor coupled between the power supply voltage bus and said intermediate node; a pair of N-channel pull-down field-effect transistors, said pair of N-channel FETs being series coupled between said intermediate node and a ground bus; the gate of one of said pair being coupled to said input node, the gate of the other of said pair being coupled to the power supply voltage bus when the final output node is above ground potential, but when the output node drops below ground potential, the gate of the other of said pair is coupled to said output node; said input node being coupled to the gate of the P-channel pull-up transistor and to the gate of one of said pair of N-channel pull-down transistors.
 9. The output driver circuit of claim 8, wherein said means for clamping comprises means for simultaneously disconnecting the intermediate node from ground potential and means for connecting the intermediate node to the final output node, said means for disconnecting and said means for connecting being simultaneously activatable.
 10. The output driver circuit of claim 9, wherein said means for disconnecting comprises an additional N-channel field-effect transistor in an electrical path which selectively couples said intermediate node to ground, and said means for connecting comprises still another N-channel field-effect transistor which selectively couples said intermediate node to the final output node, both instances of selective coupling occurring in response to a negative voltage at the final output node.
 11. The output driver circuit of claim 10, wherein the gate of the N-channel field effect transistor which selectively couples said intermediate node to the final output node is permanently tied to ground potential.
 12. The output driver circuit of claim 10, wherein the gate of the N-channel field-effect transistor in the electrical path which selectively couples said intermediate node to ground, is tied to a node which is coupled to V_(CC) through a device which functions as a resistor, and to the final output node through yet another N-channel field-effect transistor, the gate of this last transistor being permanently tied to ground potential.
 13. The output driver circuit of claim 12, wherein the device which functions as a resistor is a P-channel field-effect transistor having its gate tied to ground potential.
 14. The output driver circuit of claim 12, wherein the device which functions as a resistor is an N-channel field-effect transistor having its gate tied to V_(CC).
 15. A space-efficient, inverting output driver circuit that reduces hot electron injection, said circuit comprising:a first P-channel FET; first, second, third, fourth and fifth N-channel FETs; each P-channel FET and each N-channel FET having, by definition, a gate, a source region, a drain region, and a channel region; a resistive device; said fifth N-channel FET having greater drive than said resistive device; the gate of the second N-channel FET being coupled to a power supply voltage (V_(CC)) through the resistive device; the gates of the fourth N-channel FET, and the fifth N-channel FET being permanently held at ground potential; an input node which is coupled to the gates of the first P-channel FET and the first N-channel FET; an intermediate node that is coupled to a power supply voltage (V_(CC)) through the first P-channel FET, and to ground through both the first N-channel FET and the second N-channel FET, said first and second N-channel FETs being series coupled, with the first N-channel FET being electrically nearer the intermediate node; said intermediate node being coupled to the gate of the third N-channel FET; and a final output node that is coupled to V_(CC) through the third N-channel FET, to the intermediate node through the fourth N-channel FET, and to the gate of the second N-channel FET through the fifth N-channel FET.
 16. The inverting output driver circuit of claim 15, wherein said resistive device is a second P-channel FET having its gate permanently held at ground potential.
 17. The inverting output driver circuit of claim 15, wherein said resistive device is a sixth N-channel FET having its gate permanently held at a potential of V_(CC).
 18. A space-efficient, inverting output driver circuit that reduces hot electron injection, said circuit comprising:a first P-channel FET; first, second, third, fourth and fifth N-channel FETs; each P-channel FET and each N-channel FET having, by definition, a gate, a source region, a drain region, and a channel region; a resistive device; said fifth N-channel FET having greater drive than said resistive device; the gate of the first N-channel FET being coupled to a power supply voltage (V_(CC)) through the resistive device; the gates of the fourth N-channel FET, and the fifth N-channel FET being permanently held at ground potential; an input node which is coupled to the gates of the first P-channel FET and the second N-channel FET; an intermediate node that is coupled to a power supply voltage (V_(CC)) through the first P-channel FET, and to ground through both the first N-channel FET and the second N-channel-FET, said first and second N-channel FETs being series coupled, with the first N-channel FET being electrically nearer the intermediate node; said intermediate node being coupled to the gate of the third N-channel FET; and a final output node that is coupled to V_(CC) through the third N-channel FET, to the intermediate node through the fourth N-channel FET, and to the gate of the first N-channel FET through the fifth N-channel FET.
 19. The inverting output driver circuit of claim 18, wherein said resistive device is a second P-channel FET having its gate permanently held at ground potential.
 20. The inverting output driver circuit of claim 18, wherein said resistive device is a sixth N-channel FET having its gate permanently held at a potential of V_(CC). .Iadd.
 21. An output driver circuit comprising:a P-channel FET; a resistive device; first, second, third, fourth, and fifth N-channel FETs;a gate of the second N-channel FET being coupled to a supply voltage through the resistive device; and gates of the fourth and fifth N-channel FETs being coupled to a reference voltage; an input node coupled to gates of the P-channel FET and the first N-channel FET; an intermediate node coupled to the supply voltage through the P-channel FET and to the reference voltage through the first and second N-channel FETs;said intermediate node being coupled to a gate of the third N-channel FET; and an output node coupled to the supply voltage through the third N-channel FET, to the intermediate node through the fourth N-channel FET, and to the gate of the second N-channel FET through the fifth N-channel FET. .Iaddend..Iadd.
 22. The output driver circuit of claim 21 wherein the resistive device is selected from a group comprising another P-channel FET having a gate coupled to the reference voltage, a sixth N-channel FET having a gate coupled to the supply voltage, a resistor, and a strip of polycrystalline silicon. .Iaddend..Iadd.23. The output driver circuit of claim 21 wherein a drain of the first N-channel FET is coupled to the intermediate node and the source of the second N-channel FET is coupled to the reference voltage. .Iaddend..Iadd.24. An output driver circuit comprising:an output node; a pull-up FET for coupling the output node to a supply voltage; an intermediate node coupled to a gate of the FET; an input node; input circuitry for coupling the input node to the intermediate node; and clamping circuitry for clamping the intermediate node to the output node when a voltage at the output node drops at least a threshold voltage below a reference voltage. .Iaddend..Iadd.25. The output driver circuit of claim 24 wherein the input circuitry comprises a tri-state inverter circuit. .Iaddend..Iadd.26. The output driver circuit of claim 24 wherein the pull-up FET comprises a pull-up N-channel FET. .Iaddend..Iadd.27. The output driver circuit of claim 24 wherein the input circuitry includes first and second N-channel FETs coupled in series between the intermediate node and the reference voltage, wherein the clamping circuitry comprises:a P-channel FET having a gate coupled to the reference voltage, a source coupled to the supply voltage, and a drain coupled to a gate of one of the first and second N-channel FETs; a third N-channel FET having a gate coupled to the reference voltage, a source coupled to the output node, and a drain coupled to the drain of the P-channel FET; and a fourth N-channel FET having a gate coupled to the reference voltage, a source coupled to the output node, and a drain coupled to the intermediate node. .Iaddend..Iadd.28. A circuit for clamping a gate of an output driver FET to a source of the output driver FET in response to an output voltage at the source dropping below a reference voltage at the gate by at least a threshold voltage, the circuit comprising: first switching circuitry for isolating the gate from the reference voltage in response to the output voltage dropping below the reference voltage by at least the threshold voltage; and second switching circuitry for coupling the gate to the source in response to the output voltage dropping below the reference voltage by at least the threshold voltage. .Iaddend..Iadd.29. The circuit of claim 28 wherein the first switching circuitry comprises:a first N-channel FET having a gate, a source coupled to the reference voltage, and a drain selectively coupled to the gate of the output driver FET; a resistive device for coupling the gate of the first N-channel FET to a supply voltage; and a second N-channel FET having a gate coupled to the reference voltage, a source coupled to the source of the output driver FET, and a drain coupled to the gate of the first N-channel FET. .Iaddend..Iadd.30. The circuit of claim 28 wherein the second switching circuitry comprises an N-channel FET having a gate coupled to the reference voltage, a source coupled to the source of the output driver FET, and a drain coupled to the gate of the output driver FET. .Iaddend. 